Measurement of the double layer capacitance of aluminium samples by holographic interferometry

In the present investigation, holographic interferometry was utilized for the first time to measure the double layer capacitance of aluminium samples during the initial stage of anodization processes in an aqueous solution without any physical contact. The anodization process (oxidation) of the aluminium samples was carried out chemically in different sulphuric acid concentrations (0.5–3.125% H₂S0₄) at room temperature. In the meantime, a method of holographic interferometry was used to measure the thickness of anodization (oxide film) of the aluminium samples in aqueous solutions. Along with the holographic measurement, a mathematical model was derived in order to correlate the double layer capacitance of the aluminium samples in solutions to the thickness of the oxide film of the aluminium samples which forms due to the chemical oxidation. The thickness of the oxide film of the aluminium samples was measured by real-time holographic interferometry. Consequently, holographic interferometry is found to be very useful for surface finish industries, especially for monitoring the early stage of anodization processes of metals, in which the thickness of the anodized film as well as the double layer capacitance of the aluminium samples can be determined in situ. In addition, a comparison was made between the obtained data of the double layer capacitance from the holographic measurements and the double layer capacitance data obtained from measurements of electrochemical impedance spectroscopy. The comparison indicates that there is good agreement between the data from both techniques.