Radiofrequency plasma decomposition of C n F2n+2-H2 and CF4-C2F4 mixtures during Si etching or fluoropolymer deposition期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Radiofrequency plasma decomposition of C n F2n+2-H2 and CF4-C2F4 mixtures during Si etching or fluoropolymer deposition

Authors:	Riccardo d'Agostino Santolo De Benedictis Francesco Cramarossa

Institution:	(1) Centro di Studio per la Chimica dei Plasmi del C.N.R., Dipartimento di Chimica dell'Università, Via Amendola, 173, 70126 Bari, Italy

Abstract:	Microscopic decomposition processes and gas-solid interactions in C_nF_2n+2-H₂ and CF₄-C₂F₄ discharges are studied by comparing mass-spectrometric results with actinometric emission diagnostics. The role played by CF_x radicals is evident in the various processes of gas-phase formation of saturates and unsaturates as well as in the activation growth mechanism of polymer deposition.

Keywords:	Silicon etching polymerization of fluorocarbons plasma decomposition of fluorocarbons
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