Origin of dielectric relaxations in KHSeO4 above room temperature |
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Authors: | O Checa R A Vargas J E Diosa |
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Institution: | 1. Departamento de Ciencias Básicas, Universidad Nacional de Colombia, Palmira, Colombia 2. Departamento de Física, Universidad del Valle, 25360, Cali, Colombia
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Abstract: | The dispersion curves of the dielectric response for KHSeO4 were obtained in the radio frequency range at several isotherms below the fast proton conducting phase (T?<?415 K). The results reveal a distinct dielectric relaxation at low frequency, which is about 682 Hz at 320 K, and then, it shifts to higher frequencies (~10 kHz) as the temperature increases. The f max vs. reciprocal T shows an activated relaxation process with an activation energy of 0.5 eV, which is in close agreement with that associated with transport of charge carriers. We suggest that the observed dielectric relaxation could be attributed to polarization induced by the proton jump and selenate tetrahedral reorientations. The displacement of mobile H+ proton accompanied by SeO 4 ??2 tetrahedra reorientations creates structural distortion in both sublattices which induce localized dipoles like HSeO 4 ? . |
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