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On the assessment of CIGS surface passivation by photoluminescence
Authors:Jonathan Joel  Bart Vermang  Jes Larsen  Olivier Donzel‐Gargand  Marika Edoff
Institution:1. ?ngstr?m Solar Center, University of Uppsala, Uppsala, Sweden;2. Phone: +32 16 28 1205Fax: +32 16 22 9400;3. KU Leuven Department of Electrical Engineering, University of Leuven, Leuven, Belgium
Abstract:An optimized test structure to study rear surface passivation in Cu(In,Ga)Se2 (CIGS) solar cells by means of photoluminescence (PL) is developed and tested. The structure – illustrated in the abstract figure – is examined from the rear side. To enable such rear PL assessment, a semi‐transparent ultra‐thin Mo layer has been developed and integrated in place of the normal rear contact. The main advantages of this approach are (i) a simplified representation of a rear surface passivated CIGS solar cell is possible, (ii) it is possible to assess PL responses originating close to the probed rear surface, and (iii) a stable PL response as a function of air exposure time is obtained. In this work, PL measurements of such structures with and without rear surface passivation layers have been compared, and the measured improvement in PL intensity for the passivated structures is associated with enhanced CIGS rear interface properties.
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Keywords:solar cells  thin films  CuInGaSe2  surface passivation  photoluminescence
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