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Selective fabrication of n‐ and p‐type SnO films without doping |
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| Authors: | Hiroyuki Hayashi Shota Katayama Rong Huang Kosuke Kurushima Isao Tanaka |
| Institution: | 1. Research Center for Low Temperature and Materials Science, Kyoto University, Yoshida‐honmachi, Sakyo, Kyoto, Japan;2. Department of Materials Science and Engineering, Kyoto University, Yoshida‐honmachi, Sakyo, Kyoto, Japan;3. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, P.R. China;4. Toray Research Center, Inc., Sonoyama, Otsu, Shiga, Japan |
| Abstract: | Undoped n‐ and p‐type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria‐stabilized zirconia (YSZ) substrates with out‐of‐plane and in‐plane orientation relationships of (001)SnO//(001)YSZ and 110]SnO//100]YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm2/Vs at room temperature and the carrier activation energy is 0.14 eV for the n‐type film. The growth at increased oxygen partial pressure yields p‐type films, demonstrating the selective fabrication of both n‐ and p‐type SnO films without doping. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
| Keywords: | SnO thin films pulsed laser deposition oxide semiconductors epitaxial growth optical transmission oxygen partial pressure |