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Orientations of ZnO grown on GaN
Authors:Yi‐Sen Shih  Pei‐Yi Lin  Lin‐Lung Wei  Li Chang
Affiliation:1. Department of Materials Science and Engineering, Hsinchu, Taiwan;2. Phone: + 886‐3‐5712121, ext. 31615Fax: + 886‐3‐5724727
Abstract:On semipolar urn:x-wiley:18626254:media:pssr201409467:pssr201409467-math-0003 epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of urn:x-wiley:18626254:media:pssr201409467:pssr201409467-math-0004//urn:x-wiley:18626254:media:pssr201409467:pssr201409467-math-0005 and urn:x-wiley:18626254:media:pssr201409467:pssr201409467-math-0006 The other oriented ZnO domains then grow on faceted urn:x-wiley:18626254:media:pssr201409467:pssr201409467-math-0007 with urn:x-wiley:18626254:media:pssr201409467:pssr201409467-math-0008 and urn:x-wiley:18626254:media:pssr201409467:pssr201409467-math-0009 with good coherency with the urn:x-wiley:18626254:media:pssr201409467:pssr201409467-math-0010‐oriented grains. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
Keywords:transmission electron microscopy  X‐ray diffraction  ZnO  thin films  GaN  chemical vapor deposition
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