Tuning of the open‐circuit voltage by wide band‐gap absorber and doped layers in thin film silicon solar cells |
| |
| Authors: | Shuo Wang Vladimir Smirnov Tao Chen Xiaodan Zhang Shaozhen Xiong Ying Zhao Friedhelm Finger |
| |
| Institution: | 1. IEK5‐Photovoltaik, Forschungszentrum Jülich GmbH, Jülich, Germany;2. Institute of Photo‐electronic Thin Film Device and Technique, Nankai University, Tianjin, People's Republic of China;3. Present address: Jiangyin Everise Technology Co., Ltd., Jiangyin, People's Republic of China |
| |
| Abstract: | We present an experimental study combined with computer simulations on the effects of wide band‐gap absorber and window layers on the open‐circuit voltage (Voc) in single junction thin film silicon solar cells. The quantity ΔEp, taking as the difference between the band gap and the activation energy in ?p? layer, is treated as a measure of the p‐layer properties and shows a linear relation with Voc over a range of 100 mV with a positive slope of around 430 mV/eV. Two limiting mechanisms of Voc are identified: the built‐in potential at lower ΔEp and the band gap of the absorber layer at higher ΔEp. The results of the experimental findings are confirmed by computer simulations. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
| |
| Keywords: | open‐circuit voltages built‐in potential amorphous silicon oxides doped layers wide band‐gap absorbers solar cells |
|
|
