Improvement of resistive switching fluctuations by using one step lift‐off process |
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| Authors: | Yingtao Li Xiaoping Gao Liping Fu Peng Yuan Hong Wang Chunlan Tao |
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| Institution: | 1. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou, P.R. China;2. Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou, P.R. China;3. Cuiying Honors College, Lanzhou University, Lanzhou, P.R. China;4. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, P.R. China |
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| Abstract: | Bipolar resistive switching characteristics are investigated in ZrO2 containing Cu thin layer devices, particularly for the self‐isolated‐structure device fabricated by one step lift‐off process. Compared with the traditional‐structure device, the self‐isolated‐structure device shows more uniform resistive switching characteristics. This is because the isolation of each device cell has negligible influence on each other and thus mitigates possible crosstalk between each cell. These results suggest that the feasibility of good stabilization of the resistive switching parameters can be obtained through one step lift‐off process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | resistive switching lift‐off process ZrO2 copper RRAM |
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