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A layered antiferromagnetic semiconductor EuMTe3 (M = Bi,Sb)
Authors:Ying Y. Niu  Dong Wu  Liang Shen  Biao Wang
Affiliation:State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat‐sen University, Guangzhou, P.R. China
Abstract:We synthesized ternary tellurides EuMTe3 (M = Bi, Sb) using a low‐temperature flux method. These compounds crystallize in the Pmmn space group with layered structure. A superstructure modulation along the b‐axis was observed. Physical property measurements revealed that these compounds are antiferromagnetic semiconductors. Finally, a strong spin–orbit coupling with possible novel quantum interference between localization and weak antilocalization effects was suggested in the present system. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
Keywords:XRD  crystal structure  antiferromagnetic semiconductor
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