A layered antiferromagnetic semiconductor EuMTe3 (M = Bi,Sb) |
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Authors: | Ying Y. Niu Dong Wu Liang Shen Biao Wang |
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Affiliation: | State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat‐sen University, Guangzhou, P.R. China |
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Abstract: | We synthesized ternary tellurides EuMTe3 (M = Bi, Sb) using a low‐temperature flux method. These compounds crystallize in the Pmmn space group with layered structure. A superstructure modulation along the b‐axis was observed. Physical property measurements revealed that these compounds are antiferromagnetic semiconductors. Finally, a strong spin–orbit coupling with possible novel quantum interference between localization and weak antilocalization effects was suggested in the present system. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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Keywords: | XRD crystal structure antiferromagnetic semiconductor |
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