Layered MoS2 grown on c ‐sapphire by pulsed laser deposition |
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| Authors: | Yen‐Teng Ho Chun‐Hao Ma Tien‐Tung Luong Lin‐Lung Wei Tzu‐Chun Yen Wei‐Ting Hsu Wen‐Hao Chang Yung‐Ching Chu Yung‐Yi Tu Krishna Prasad Pande Edward Yi Chang |
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| Institution: | 1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;2. Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan;3. Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, Taiwan;4. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan |
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| Abstract: | Layered growth of molybdenum disulphide (MoS2) was successfully achieved by pulsed laser deposition (PLD) method on c ‐plane sapphire substrate. Growth of monolayer to a few monolayer MoS2, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A1g–E12g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm–1, suggesting a monolayer MoS2 was obtained. Two‐dimensional (2D) layer growth of MoS2 is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross‐sectional view of transmission electron microscopy (TEM). The in‐plane relationship, (0006) sapphire//(0002)MoS2and  sapphire// MoS2 is determined. The results imply that PLD is suitable for layered MoS2 growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS2, analysed by X‐ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | transition‐metal dichalcogenides two‐dimensional layers MoS2 pulsed laser deposition sulfurization sapphire substrates |
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