Recombination in electron-hole droplets in polar and non-polar indirect band gap semiconductors and carrier concentration power law |
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Authors: | KN Shrivastava |
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Institution: | School of Physics, University of Hyderabad, P.O. Central University, Hyderabad 500 134, India |
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Abstract: | The dependence of the recombination relaxation rate on the carrier concentration, n, is examined in detail. It is found that in polar indirect band gap semiconductors the phonon-induced recombination rate varies as at low temperatures. This is a new power law. On the other hand, in the non-polar materials, the relaxation rate varies as a linear combination of n2, and terms. We find the experimental evidence for the occurence of and contributions for the first time. |
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