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Electric field dependence of the dielectric susceptibility in K1−xLixTaO3
Authors:U.T. Höchli  D. Rytz  J.J. Van der Klink  F. Borsa
Affiliation:IBM Zurich Research Laboratory, 8803 Rüschlikon, Switzerland;Institut de Physique Expérimentale, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland;Istituto di Fisica dell''Università e Unità Gruppo Nazionale di Structtura della Materia del Consiglio Nazionale delle Ricerche, 27100 Pavia, Italy
Abstract:Results are presented for the dielectric function ε1 = ε1 + iε2 in K1?xLixTaO3 in the frequency range 10 < f < 106 Hz and for several fields. The data are analysed in terms of dielectric relaxation, and it is shown that the electric bias field modifies the relaxation behaviour drastically.
Keywords:
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