Nonparabolicity and warping in the conduction band of GaAs

The dispersion of the conduction band in GaAs is calculated using k·p models which in different ways take into account the coupling to the p-bonding and p-antibonding states. Nonparabolicity, warping and spin-splitting are accurately described up to energies about 50 meV above the conduction band minimum by the 8×8 Kane model. For higher energies a 14×14 matrix is required.