Disorder and the fractional quantum Hall effect |
| |
| Authors: | M.A. Paalanen D.C. Tsui A.C. Gossard J.C.M. Hwang |
| |
| Affiliation: | 1. AT&T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.;1. Department of Electrical Engineering and Computer Science, Princeton University, Princeton, NJ 08544, U.S.A. |
| |
| Abstract: | The fractional quantum Hall effect is studied in the 2D electron gas of four GaAs-AlxGa1?xAs heterostructures. Localization due to disorder, known to give rise to the wide integral quantum Hall plateaus, is demonstrated to inhibit the fractional effect, which is observed only in the higher mobility samples. |
| |
| Keywords: | Present address: G. E. Electronics Laboratory P.O. Box 488 Syracuse NY 13221 U.S.A. |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
