Electronic structure of the ideal silicon vacancy by the muffin-tin green's function method |
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| Authors: | WE Pickett BM Klein |
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| Institution: | Condensed Matter Physics Branch Naval Research Laboratory Washington, D.C. 20375, USA |
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| Abstract: | The muffin-tin Green's function method is applied to the ideal vacancy in silicon in the extended-charge single site approximation. The characteristics of the partially occupied gap state are found to be strongly dependent on the extent of the charge perturbation outside of the vacancy muffin-tin. |
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