Electrical characterization of tin disulphide crystals |
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Authors: | Joy George C.K. Valsala Kumari |
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Affiliation: | Solid State Physics Laboratory, Department of Physics, University of Cochin, Cochin 682022, Kerala, India |
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Abstract: | Tin disulphide crystals have been grown by the physical vapour transport method and the electrical conduction mechanism in these crystals using MIM structures is reported. The conduction is found to be space charge limited. Trap concentration, trap depth, free carrier mobility and Fermi level etc. have been determined. Dependence of the current on temperature in the ohmic region gives an activation energy of 0.40 ± 0.05 eV. |
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