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Capacitively coupled measurements of the quantized hall effect in silicon inversion layers
Authors:T.P. Smith  P.J. Stiles
Affiliation:Physics Department, Brown University Providence, R. I. 02912 USA
Abstract:We report the observation of the quantized Hall effect in silicon inversion layers using capacitors in place of ohmic contacts. Measurements were made at frequencies between 5.00 and 100.0 kHz.
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