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Core-exciton induced resonant photoemission in the covalent semiconductor black phosphorus |
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| Authors: | M Taniguchi S Suga M Seki H Sakamoto H Kanzaki Y Akahama S Endo S Terada S Narita |
| Institution: | Synchrotron Radiation Laboratory, Institute for Solid State Physics, The University of Tokyo, Tanashi, Tokyo 188, Japan;High Pressure Research Laboratory, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan;High Pressure Research Laboratory and Department of Material Physics, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan |
| Abstract: | Valence band photoemission spectra of black phosphorus have shown anomalous behavior at the excitation of 2p core-excitons. The intensity of the 2.7 ev peak shows a clear Fano type interference due to a direct recombination of core-excitons leaving one hole in valence bands. Besides, strong enhancement of the 10.8 eV peak is interpreted as due to a core-exciton induced resonance with two-hole final states. The role of core-excitons as intermediate states for photoemission processes is newly revealed in the experiments. |
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