Electronic structure of defects in amorphous silicon |
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Authors: | Savitri Agrawal Bal K. Agrawal |
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Affiliation: | Physics Department, Allahabad University, Allahabad 211002, INDIA |
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Abstract: | The effects of a variety of defect centres such as T03, T02, T01 and their interacting units on the electronic structure of the amorphous silicon has been studied in a cluster Bethe lattice method. The gap states arising from these defects may explain a number of experimental observations. |
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