High pressure study of BaPb0.7Bi0.3O3 films |
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Authors: | TH Lin XY Shao JH Lin CW Chu T Inamura T Murakami |
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Institution: | Department of Physics and Energy Laboratory, University of Houston, University Park, Houston, TX 77004, U.S.A.;Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 162 Tokai, Ibaraki 319-11, Japan |
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Abstract: | The resistance R, the superconducting transition temperature Tc and the energy gap Δ(T) have been measured on the BaPb0.7Bi0.3O3 films up to 14 kbar. We have found that up to 14 kbar: (1) pressure suppresses Tc and Δ(T) while enhances R, (2) the value of 2Δ(0)/kTc is 3.8±0.1, independent of pressure, and (3) the Δ(T)/Δ(0) varies with T/Tc in a BCS fashion but only for T/Tc<0.75 and independent of pressure. The results show that BaPb1?xBixO3 is a weak-coupling superconductor, but fail to provide information about the cause for the high Tc of the compound. |
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