Final state effects of deep impurities in semiconductors

Current theoretical and computational models for optical excitation processes of deep level impurities in semiconductors tend to concentrate on the impurity itself, largely ignoring the effects the impurity has no final states. Using a spherical band model, we show these effects can be included in calculations on optical absorption processes. The band state is modified by the presence of the impurity and this modified state is used in the calculation of optical matrix elements. We show that final state effects can cause significant changes in the local density of states and optical matrix elements.