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Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation |
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| Authors: | W. Lei Y.L. Ren Y.L. Wang Q. Li |
| Affiliation: | aDepartment of Electronic Materials Engineering, RSPhysSE, Australian National University, ACT 0200, Australia;bCenter for Sustainable Energy Systems, FEIT, Australian National University, ACT 0200, Australia;cR&D Department in Beijing Tongmei Xtal Technology Co. Ltd, Tongzhou, Beijing 101113, People's Republic of China |
| Abstract: | The alloy phase separation effect in InAlAs spacer layer of InAs/InAlAs nanostructure superlattices was studied by two-dimensional finite element calculation. The calculation results showed that InAs islands with wide top would prefer to induce “V”-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer, while InAs islands with narrow top would promote the formation of “I”-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer which corresponded well with the experimental results reported in Ref. [9]. |
| Keywords: | A1. Nanostructures A1. Alloy phase separation A3. Molecular beam epitaxy B2: Semiconducting III– V materials B2. InAs/InAlAs |
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