Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon |
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作者姓名: | 李东升 杨德仁 E.Leonit S.Binetti S.Pizzini |
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作者单位: | [1]StateKeyLaboratoryofSiliconMaterials,ZhejiangUniversity,Hangzhou310027 [2]INFMandUniversityofMilanoBicocca,Milan,Italy |
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摘 要: | We investigate optical properties of dislocations in nitrogen-doped and nitrogen-free Czochralski silicon. The dislocations are formed during crystal growth, but not formed during deformation. The results show that in nitrogen-doped samples, a broad band replaced the D1 band of dislocation, regardless of dislocation density. The replacement of D1 band is caused by the non-irradiation combination induced by oxygen precipitation. Moreover,a new emission at 0.975 eV is observed in both the nitrogen-free and doped samples when the dislocation density is lower than 104 cm-2.
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关 键 词: | 光学性质 光激发光 光子能量级 热振动 |
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