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碳链输运对基团吸附的敏感性分析
引用本文:邱明,张振华,邓小清. 碳链输运对基团吸附的敏感性分析[J]. 物理学报, 2010, 59(6): 4162-4169
作者姓名:邱明  张振华  邓小清
作者单位:长沙理工大学物理与电子科学学院,长沙 410114
基金项目:国家自然科学基金(批准号:60771059)、湖南省教育厅科研基金(批准号:08A005, 08C110)和长沙理工大学重点学科建设计划资助的课题.
摘    要:基于局域原子轨道的密度泛函理论和非平衡格林函数方法,研究了碳链输运特性对分别吸附7种常见官能团NO2, CN, CHO, Br, C6H5, C5H4N和NH2时的敏感性. 计算表明,电流对C6H5和CHO的吸附最为敏感,其次是对CN和C5H4N的吸附,在某些偏压下电流有大幅度的下降,其值关键词:碳链输运特性密度泛函理论非平衡格林函数

关 键 词:碳链  输运特性  密度泛函理论  非平衡格林函数
收稿时间:2009-06-06

Analysis on transport sensitivity for a carbon atomic wire attached with side groups
Qiu Ming,Zhang Zhen-Hua,Deng Xiao-Qing. Analysis on transport sensitivity for a carbon atomic wire attached with side groups[J]. Acta Physica Sinica, 2010, 59(6): 4162-4169
Authors:Qiu Ming  Zhang Zhen-Hua  Deng Xiao-Qing
Affiliation:School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China;School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China;School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China
Abstract:Based on the local atomic-orbital density functional theory plus the nonequilibrium Green’s function approach, we study the transport sensitivities of a carbon atomic wire attached, respectively with seven kinds of commonly seen side-groups NO2, CN, CHO, Br, C6H5, C5H4N, NH2. The calculated results show that the transport current is most sensitive to attached C6H5 and CHO groups, less sensitive to attached CN and C5H4N groups. Under certain bias values, the currents have a substantial decline and would reached to 1/2, or even 1/3 the magnitude as the unattached system C6. But the transport of the carbon atomic wire is little influenced by the attached NO2, NH2, and Br. The intrinsic origins of side-group effects on the transport current in the wire are the suppression of the transmission eigen-channel, change of the Mulliken population, diminution of the delocalization of highest occupied molecular orbital or lowest unoccupied molecular orbital, and alteration of the resonant molecular orbital.
Keywords:BC3 nanotube   energy gap   strain-deformation   semiconductor
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