Electron-active silicon oxidation

Visible and ultraviolet light was employed in a series of refining experiments to reveal the kinetics of photon-enhanced oxidation of silicon. The experimental evidence then gave rise to an electron-active silicon oxidation process involving electron emission from Si into SiO₂ moderating the dissociation of molecular oxygen near the interface. Photonicallystimulated oxidation enhancement then straightforwardly derives from an enhanced level of electron emission. This simple model helps to clarify normal dry thermal oxidation growth kinetics, as well as thin oxide rapid growth behavior and the charged-versus-neutral oxidant controversy. Finally, attention is called to the not generally recognized but likely role that secondary electron emission from surfaces may play in moderating the chemistry of various electron, ion and photon beam-induced surface reactions.