Electronic structure of Ga1−xCrxN investigated by photoemission spectroscopy |
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| Authors: | J. J. Kim H. Makino K. Yamazaki A. Ino H. Namatame M. Taniguchi T. Hanada M. W. Cho T. Yao |
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| Affiliation: | a Center for Interdisciplinary Research, Tohoku University, Aramaki-Aza-Aoba, Aoba-ku, Sendai 980-8578, Japan;b Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;c Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-hiroshima 739-8526, Japan;d Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-8526, Japan |
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| Abstract: | We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the difference spectrum between the valence band photoemission spectra of non-doped GaN and that of the Ga0.937Cr0.063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization. |
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| Keywords: | Photoemission spectroscopy Ferromagnetic DMS Ga1− xCrxN |
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