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V(100)表面上S和O偏析的LEED—AES研究
引用本文:许掌龙,刘古,季振国,周小霞. V(100)表面上S和O偏析的LEED—AES研究[J]. 物理学报, 1987, 36(11): 1485-1491
作者姓名:许掌龙  刘古  季振国  周小霞
作者单位:(1)浙江大学物理系; (2)浙江大学物理系,现在上海交通大学应用物理系86级博士生; (3)浙江大学中心实验室
摘    要:用AES,LEED等表面分析手段,对V(100)表面上杂质S,O偏析作了详细研究。明确了S,O偏析关系;发现(8×1)-O,(4×1)-O两个新的表面结构;系统观察和分析了V(100)表面在不同S,O偏析量情况下的各种表面超结构,并获得这些表面超结构的相互关系。关键词

收稿时间:1986-11-17

A LEED-AES INVESTIGATION OF SULPHUR AND OXYGEN SEGREGATION ON VANADIUM(100) SURFACE
XU ZHANG-LONG,LIU GU,JI ZHEN-GUO and ZHOU XIAO-XIA. A LEED-AES INVESTIGATION OF SULPHUR AND OXYGEN SEGREGATION ON VANADIUM(100) SURFACE[J]. Acta Physica Sinica, 1987, 36(11): 1485-1491
Authors:XU ZHANG-LONG  LIU GU  JI ZHEN-GUO  ZHOU XIAO-XIA
Abstract:The sulphur and oxygen segregation on V(100) surface is investigated in detail by AES and LEED. The relation between S and O segregation is clearly demonstrated and two new surface reconstructions, (8×1)-O and (4×l)-O,on V(100) surface are disclosed. Various superstructures on this surface under different conditions of S & O segregation are studied systematically and the relationship among these surface structures is obtained.
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