Passively Q-switched Nd:GdVO4 laser with In0.25Ga0.75As being an output coupler |
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| Authors: | Bingyuan Zhang Gang Li Meng Chen Guoju Wang Yonggang Wang |
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| Affiliation: | aCollege of Laser Engineering, Beijing University of Technology, Beijing 100022, China;bCollege of Physics Science and Information Engineering, Liaocheng University, Liaocheng 252059, China;cInstitute of Semiconductors, Chinese Academy of Science, Beijing 100081, China |
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| Abstract: | We report a diode-end-pumped passively Q-switched Nd:GdVO4 laser operating at 1.06 μm with In0.25Ga0.75As being the saturable absorber as well as an output coupler. Q-switched pulses with a pulse duration of 20 ns, pulse energy 4.2 μJ and pulse repetition rate 200 kHz were produced, corresponding to peak power of 210 W. |
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| Keywords: | Diode-end-pumped Q-switched Nd:GdVO4 |
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