Anisotropy of the surface properties of germanium in contact with an electrolyte containing gold ions

Recombination curves and polarization curves as well as the differential capacitance of an interface layer and the deflection of energy-band surfaces as functions of the electrode potential have been measured at the interface between n-germanium and 0.1 M Na₂SO₄ + (10^?8 to 10^?6) M Au³⁺ by a complex method. The lattice planes (111), (110), and (100) of germanium were examined. It has been shown that the parameters of states implanted during gold deposition depend on the surface orientation. A correlation has been discovered between the ratio of the hole-entrapment section to the electron-entrapment section and the electrode potential of plane-energy bands. This relation indicates that the parameters of recombination centers depend on the potential distribution across the electric double layer. The study was also concerned with the kinetics of recombination centers generated during gold deposition. It is suggested that the surface states at germanium surfaces in contact with a neutral electrolyte are of the same nature, whether or not such surfaces have been doped with gold.