Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillations |
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| Authors: | T Sakamoto H Funabashi K Ohta T Nakagawa NJ Kawai T Kojima Y Bando |
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| Institution: | 1. Electrotechnical Laboratory 1-1-4 Umezono, Sakura, Niihari, Ibaraki, 305 JAPAN;2. Japan Aviation Electronics Industry Co. Ltd., 1-21-6, Dogenzaka, Shibuya, Tokyo, 105 JAPAN;3. National Institute for Research in Inorganic Materials 1, Namiki, Sakura, Niihari, Ibaraki, 305 JAPAN |
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| Abstract: | Long continuing intensity oscillations of the RHEED pattern in the 100] azimuth on a (001) oriented substrate were observed during MBE growth of GaAs and AlxGa1−xAs. Using these oscillations, growth rates of GaAs and AlxGa1−xAs, and the Al mole fraction x of the AlxGa1−xAs were accurately monitored during the growth. The phase of the RHEED oscillations was analyzed by computer and molecular beam shutters were operated at a particular phase of the oscillations. This computer controlled phase-locked epitaxy (PLE) was used to grow precisely defined (GaAs)2(AlAs)2 bi-layer superlattices. Raman scattering spectra of the bi-layer superlattice showed split lines characteristic of superlattices. From TEM observation of a GaAs-AlAs multi-layered structure, it was verified that one cycle of oscillations corresponds to one monolayer growth of GaAs and AlAs. This PLE has a great advantage over the conventional MBE growth method for the precise control of very thin films and superlattice structures because it is invulnerable to fluctuations of molecular beam flux intensity. |
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