首页 | 本学科首页   官方微博 | 高级检索  
     检索      

1.5μm InP/InGaAs MQW-LD驱动电路的设计
引用本文:陈维友,刘式墉.1.5μm InP/InGaAs MQW-LD驱动电路的设计[J].固体电子学研究与进展,1993,13(4):356-361.
作者姓名:陈维友  刘式墉
作者单位:吉林大学电子科学系 集成光电子学国家重点联合实验室吉林大学实验区(陈维友),吉林大学电子科学系 长春(刘式墉)
摘    要:讨论了由4个InP/InGaAs HBT构成的OEIC光发射机驱动电路的设计。研究结果表明.由最佳性能的HBT构成的驱动电路,其性能不一定就是最佳的,驱动电路的性能与激光器的串联电阻有很大关系。本文对激光器的串联电阻为9Ω的情况,从几何参数优化设计一驱动电路,其调制带宽可达3.4GHz,脉码凋制时。开关时间约为100ps。用它驱动一多量子阱激光器,脉码调制时,光信号响应开头时间约为288ps。

关 键 词:驱动电路  光发射机  计算机辅助分析  优化设计

The Design of HBT Driver Circuit for 1.5μm InP/InGaAs OEIC Lightwave Transmitter
Chen Weiyou,Liu Shiyong.The Design of HBT Driver Circuit for 1.5μm InP/InGaAs OEIC Lightwave Transmitter[J].Research & Progress of Solid State Electronics,1993,13(4):356-361.
Authors:Chen Weiyou  Liu Shiyong
Abstract:The design of an OEIC lightwave transmitter driver circuit composed of four InP/InGaAs HBTs is discussed in this paper. It is shown that the high fre-quency characteristics of the driver circuit composed of optimum HBTs is not neces-sarily optimum,the effect of series resistance of LD on the high frequency characteristics of the driver circuit is very evident. An optimum driver circuit is designed for 9 n series resistance ,its small-signal modulation bandwidth is 3. 4 GHz, switch time is 100 ps. Using this driver circuit to drive a MQW-LD,288 ps switch time is achieved.
Keywords:Driver Circuit  Lightwave Transmitter  Computer Aided Analysis  Optimum Design
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号