Nanoscale Analysis of Multilayer Interfaces of W/Al2O3/Ti/Cu |
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Authors: | S. Ohta D. Gotoh N. Sakaguchi H. Takahashi |
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Affiliation: | (1) Center for Advanced Research of Energy Technology, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo, 060-8628, Japan |
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Abstract: | W, Al2O3 and Ti films were deposited onto a Cu substrate by means of the rf magnetron sputtering method. After deposition, the foils were annealed at various temperatures in vacuum and the interfaces of the films were observed by a field-emission transmission electron microscopy (FE-TEM), after preparing a cross-sectional thin foil using a focused ion beam (FIB) machine. After annealing the foil at 473 and 623 K, no reaction phases were identified at each interface of W/Al2O3, Al2O3/Ti and Ti/Cu-substrate. However, from the results of compositional analysis at the interface of Al2O3/Ti bilayer, after heat-treatment at 623 K, the formation of an oxide layer was suggested even though it was not clearly observed. On the other hand, after heat-treatment at 823 K, the formation of CuTi2, Cu3Ti2 and Cu4Ti phases were identified at the interface of Ti/Cu bilayers from the compositional analysis of reaction layers after heat-treatment at different temperatures, and the diffusion coefficients and activation energies in the phases were evaluated. In this paper, the influence of heat-treatment on the interfacial behavior of multilayer are discussed on the basis of nanoscale analysis by EDS and HRTEM images. |
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Keywords: | interfacial reaction W-Al2O_3-Ti multilayer nano-structure sputtering film |
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