氮团簇离子注入单晶硅的光致发光谱研究

氮团簇离子N⁺₁₀注入单晶硅直接诱发其表层转化为纳米晶结构， 导致光学性质发生显著变化. 在250—320nm波段的紫外光激励下，在330—500nm光区出现明显的光发射带，并在360nm附近产生强度极高、单色性良好的发射峰,其强度达到N⁺注入试样或基底的5倍，是N⁺₂注入试样的1.5倍. 在可见光区的730nm附近和近红外区的830nm附近也出现发光带. 所有上述发光都非常稳定，可长时间保持其发 关键词： 光致发光 团簇离子注入 硅单晶 纳米晶结构

Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions

The structure of surface layer of monocrystalline Si by implanting nitrogen cluster ions N⁺₁₀ was transformed directly the nanocrystalline, which led to the change in optical properties of monocrystalline Si. Excited by the ultraviolet light of 250—320nm, the sample showed a clear luminescence band of 330—500nm and an extra intensive spectral peak with good monochromaticity around 360nm. The intensity of the peak were 5 times high as the intensity of the substrate or N⁺ implantation samples and 1.5 times high at the N⁺₂ implantation samples, respectively. It was also found there were two other stable luminescence bands around 730nm in the visible region and around 830nm in the infrared region, respectively. The preliminary study indicated that an excellent photoluminescence material was formed in the implanted layer.