| 垂直电子耦合InGaAs 量子结的光学特性 |
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| 引用本文： | 赵震, M.V.Maximov, N.N.Ledentsov, 等. 垂直电子耦合InGaAs 量子结的光学特性[J]. 强激光与粒子束, 1998, 10(01). |
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| 作者姓名： | 赵震 M.V.Maximov N.N.Ledentsov A.E.Zhukov V.M.Ustinov A.Yu.Egorov B.V.Volovik Yu.M.Shernyakov P.S.Kopev Zh.I.Alferov J.Boum.hrer D.Bimberg |
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| 作者单位： | 1.俄罗斯科学院,A.F.Ioffe 物理技术研究所, 圣彼得堡, 1 904021 , 俄罗斯;;;2.柏林理工大学, Hardenbergstr36,D1 0623, 柏林, 德国 |
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| 摘 要： | 报导了InGaAs/GaAs 和InGaAs/AlGaAs 垂直耦合量子结注入式激光器的制备工艺及其光致荧光谱, 量热吸收谱和电致荧光谱的特性。该激光器的连续波发光功率在室温下可达1W。
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| 关 键 词： | 半导体激光 异质结构 量子结 |
OPTICAL CHARACTERISTICS OF InGaAs VERTICALLY COUPLED QUANTUM DOTS |
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| Zhao zhen, et al. OPTICAL CHARACTERISTICS OF InGaAs VERTICALLY COUPLED QUANTUM DOTS[J]. High Power Laser and Particle Beams, 1998, 10. |
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| Authors: | Zhao zhen |
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| Affiliation: | 1. Physical Technical Institute of the Russian Academy of Sciences;Politekhnicheskaya 26 St Petersburg;194021;Russia |
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| Abstract: | An injection heterolaser based on vertically coupled quantum dots of InGaAs/GaAs or InGaAs/AlGaAs are reported in this paper. The manufacture and the spectra of photoluminescence, calorimetric absorption and electroluminescence are presented. Its CW laser power could be 1 W at room temperature. |
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| Keywords: | semiconductor laser beterostructures guantum dots |
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