| 用光激开关产生高功率亚纳秒电脉冲的研究 |
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| 引用本文： | 施卫, 赵卫, 张显斌. 用光激开关产生高功率亚纳秒电脉冲的研究[J]. 强激光与粒子束, 2001, 13(06). |
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| 作者姓名： | 施卫 赵卫 张显斌 |
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| 作者单位： | 1.西安理工大学应用物理系,陕西 西安 71 0048;;;2.中国科学院瞬态光学技术国家重点实验室,陕西 西安 71 0068 |
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| 摘 要： | 报道了用全固态绝缘结构研制的横向型半绝缘GaAs光电导开关产生高功率亚纳秒电脉冲的性能和测试结果。8mm电极间隙的开关暗态绝缘强度达30kV。分别用ns, ps和fs激光脉冲触发开关的测试表明，开关输出电磁脉冲无晃动。3mm电极间隙开关的最短电流脉冲上升时间小于200ps，脉宽达亚ns；在偏置电压2000伏，光脉冲宽度8ns、能量1.2mJ的触发条件下，峰值电流达560A。用重复频率为76MHz和108Hz的光脉冲序列触发开关也获得清晰的电流脉冲序列。
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| 关 键 词： | 光电导开关 超快电脉冲 脉冲功率技术 |
Investigation of high power sub-nanosecond electrical pulse generated by GaAs photoconductive switches |
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| shi wei, zhao wei, zhang xian-bin. Investigation of high power sub-nanosecond electrical pulse generated by GaAs photoconductive switches[J]. High Power Laser and Particle Beams, 2001, 13. |
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| Authors: | shi wei zhao wei zhang xian-bin |
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| Affiliation: | 1. Applied Physics Department,Xi’an University of Technology,Xi’an 710048 China;;;2. State Kay Laboratory of Transient Optics and Technology,Xi’an 710068,China |
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| Abstract: | In this paper, experiments of a lateral semi-insulating GaAs photoconductive semiconductor switch triggered by nano-second and pico-second and femto-second laser pulse are reported. The switches have all-solid-state insulated by multi-layer transparent dielectrics. Dark insulating intensity of the 8 mm-gap GaAs switch reached to 30kV. Jitter-free current wave form of the 3 mm-gap and 8 mm-gap GaAs switches were observed when triggered by the laser pulse. The current could be as high as 560A when the 3 mm-gap switch was under the voltage of 2 kV and triggered with 8 ns and 1.2 mJ laser pulse. The same device also revealed good temperal characteristics when trigger with pico-second laser and 108 repeat frequency laser pulse strings. The rising time the 3 mm-gap switch response is less than 2 |
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| Keywords: | photoconductive switch ultrafast electrical pulse high power pulse technology |
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