| Study on electroluminescence from porous silicon light-emitting diode |
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| 作者姓名： | 杨亚军 李清山 刘宪云 |
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| 作者单位： | College of Physics and Engineering Qufu Normal University，Qufu 273165，College of Physics and Engineering，Qufu Normal University，Qufu 273165，College of Physics and Engineering，Qufu Normal University，Qufu 273165 |
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| 基金项目： | This work was supported by the Natural Science Foundation of Shandong Province (No. Y2002A09). |
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| 摘 要： | Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.
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