Features of hopping conductivity in weakly doped and weakly compensated semiconductor quantum wells

Main features of hopping transport in quantum wells in the conditions of low doping and low compensation are considered. Based on the features of the classical law of interaction between the impurities and on the percolation problem in quantized wells, it is shown that the specific resistance and activation energy of donor centers of the well are determined by the doping parameters and sharply depend on the width of the well.