Fermi-level dependent morphology in photoinduced bond breaking on (1 1 0) surfaces of III-V semiconductors |
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Authors: | J Kanasaki |
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Institution: | The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
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Abstract: | The morphology of structural changes of InP(1 1 0)-(1 × 1) and GaAs(1 1 0)-(1 × 1) induced by electronic processes following laser excitation has been studied by scanning tunneling microscopy. Surface-vacancy clusters are predominantly formed on n-type surfaces, while isolated anion monovacancies are generated almost exclusively on p-type surfaces. This remarkable Fermi-level effect in the morphology is characterized in terms of a screened Coulomb type interaction between charged surface monovacancies and carriers generated by laser excitation. It is shown that localization of photogenerated valence holes induces electronic bond rupture at surface sites. |
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Keywords: | Photon stimulated desorption (PSD) Surface photochemistry Scanning tunneling microscopy |
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