A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water |
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Authors: | Jan ?echal,Jind?ich Mach,Stanislav Voborný ,Petr Kostelní k,Petr Bá bor,Ji?í Spousta,Tomá &scaron &Scaron ikola |
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Affiliation: | Institute of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic |
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Abstract: | Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 °C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2 × 2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments. |
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Keywords: | Gallium, Ga Silicon, Si(1 0 0) Water Surface structure Low energy electron diffraction (LEED) Synchrotron radiation photoelectron spectroscopy |
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