Early stages of interface formation of C60 on GaAs(1 0 0) |
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Authors: | A Brambilla P Sessi L Duò M Finazzi J Cabanillas-Gonzalez H-J Egelhaaf G Lanzani F Ciccacci |
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Institution: | Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy |
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Abstract: | We present a detailed investigation of the electronic properties of C60 grown on GaAs(1 0 0) substrates, as a function of the fullerene coverage, from the very early stages of interface formation up to the development of a bulk-like fullerene film. We monitor the chemical interactions and the energy levels alignment by means of X-rays, ultraviolet and inverse photoemission spectroscopies. The two latter techniques allow to investigate the electronic structure close to the Fermi level. Energy levels alignment at the interfaces of C60 with p-doped and GaAs(1 0 0) are obtained and discussed. |
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Keywords: | Fullerene Gallium arsenide Semiconductor surfaces and interfaces |
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