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Quantum conductance of In nanowires on Si(1 1 1) from first principles calculations |
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| Authors: | S. Wippermann W.G. Schmidt M. Buongiorno Nardelli K. Seino |
| Affiliation: | a Lehrstuhl für Theoretische Physik, Universität Paderborn, 33095 Paderborn, Germany b CNR-INFM National Research Center of CNR-INFM on nanoStructures and bioSystems at Surfaces (S3), 41100 Modena, Italy c CHiPS and Department of Physics, NCSU, Raleigh, NC 27695-7518 and CSMD, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6359, USA d Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germany |
| Abstract: | The quantum conductance of the paradigmatic quasi-one-dimensional In/Si(1 1 1) surface system is calculated for 4 × 1, 4 × 2 and 8 × 2 surface reconstructions. In agreement with experiment, we find the recently suggested formation of hexagons within the In nanowires [C. Gonzalez, F. Flores, J. Ortega, Phys. Rev. Lett. 96 (2006) 136101] to drastically modify the electron transport along the In chains. In contrast, the formation of trimers barely changes the quantum conductance. |
| Keywords: | In nanowires Silicon surface Density functional calculations Electron transport |
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