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Electron-phonon contribution to hole linewidth of the surface state on Al(0 0 1)
Authors:IYu Sklyadneva  A Leonardo  EV Chulkov
Institution:a Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain
b Institute of Strength Physics and Materials Science, pr. Academicheski 2/1,634021, Tomsk, Russia
c Depto. de Física de Materiales and Centro Mixto CSIC-UPV/EHU, Facultad de Ciencias Químicas, UPV/EHU Apdo. 1072, 20080 San Sebastián/Donostia, Basque Country, Spain
Abstract:We report an ab initio study of the electron-phonon interaction and its contribution to the excited hole linewidth of the View the MathML source surface state on Al(0 0 1). We have also evaluated the phonon-induced contribution to the linewidth of the occupied energy bands of Δ1 symmetry in bulk Al. The calculations were carried out using a linear response approach in the plane-wave pseudopotential representation.
Keywords:Surface dynamics  Electron-phonon coupling  Electron lifetimes
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