Desorption of chlorine atoms on Si (1 1 1)-(7 × 7) surfaces induced by hole injection from scanning tunneling microscope tips |
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Authors: | Yoshiaki Nakamura Yutaka Mera Koji Maeda |
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Affiliation: | Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan |
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Abstract: | We investigated desorption of chlorine atoms on Si (1 1 1)-(7 × 7) surfaces induced by hole injection from scanning tunneling microscope tips. The hole-induced desorption of chlorine atoms had a threshold bias voltage corresponding to the energy position of the S3 surface band originated in Si backbonds. The chlorine atom desorption rate was almost proportional to the square of the tunneling current. We have discussed possible mechanisms that two holes injected into Si surface states get localized at the backbonds of chlorinated Si adatoms, which induces the rupture of Cl-Si bonds to result in chlorine atom desorption. |
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Keywords: | Desorption induced by electron stimulation Scanning tunneling microscopy Scanning tunneling spectroscopies Chlorine Silicon Semiconducting surfaces |
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