Structural and optical properties of an InxGa1−xN/GaN nanostructure |
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Authors: | Sabit Korç ak,Sü leyman Ç ö rekç i,Hongbo Yu,Semran Sa?lam,Ekmel Ö zbay |
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Affiliation: | a Department of Physics, Gazi University, Teknikokullar, 06500 Ankara, Turkey b Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey |
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Abstract: | The structural and optical properties of an InxGa1−xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure. |
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Keywords: | Metalorganic chemical vapor deposition InxGa1&minus xN/GaN X-ray reflectivity Photoluminescence Atomic force microscopy Ellipsometry |
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