| 指数掺杂透射式GaAs光电阴极表面光电压谱研究 |
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| 引用本文： | 陈亮,钱芸生,常本康,张益军.指数掺杂透射式GaAs光电阴极表面光电压谱研究[J].中国激光,2011(9). |
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| 作者姓名： | 陈亮 钱芸生 常本康 张益军 |
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| 作者单位： | 南京理工大学电子工程与光电技术学院;中国计量学院光学与电子科技学院; |
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| 基金项目： | 国家自然科学基金(60678043,60801036); 国家质检总局项目(2008QK328)资助课题 |
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| 摘 要： | 通过求解一维稳态少数载流子扩散方程,推导了指数掺杂和均匀掺杂的透射式GaAs光电阴极表面光电压谱理论方程。利用金属有机化学气相沉积(MOCVD)外延生长了发射层厚度相同、掺杂结构不同的两款透射式阴极材料。通过表面光电压谱实验测试和理论拟合发现指数掺杂结构在发射层厚度和后界面复合速率相同的情况下能够有效提高阴极电子扩散长度,这主要由于内建电场能够促使光生电子通过扩散和电场漂移两种方式向表面运动,从而最终提升阴极的发射效率和表面光电压谱。利用能带计算公式和电子散射理论对这两种不同结构材料的表面光电压谱进行了详细分析。
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| 关 键 词： | 光电子学 GaAs光电阴极 表面光电压谱 电子扩散长度 |
Research on Surface Photovoltage Spectroscopy for Exponential Doping Transmission-Mode GaAs Photocathodes |
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| Chen Liang, Qian Yunsheng Chang Benkang Zhang YijunInstitute of Electronic Engineering & Optoelectronics Technology,Nanjing University ofScience , Technology,Nanjing,Jiangsu ,ChinaInstitute of Optoelectronics Technology,China Jiliang University,Hangzhou,Zhejiang ,China.Research on Surface Photovoltage Spectroscopy for Exponential Doping Transmission-Mode GaAs Photocathodes[J].Chinese Journal of Lasers,2011(9). |
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| Authors: | Chen Liang Qian Yunsheng Chang Benkang Zhang YijunInstitute of Electronic Engineering & Optoelectronics Technology Nanjing University ofScience Technology Nanjing Jiangsu ChinaInstitute of Optoelectronics Technology China Jiliang University Hangzhou Zhejiang China |
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| Institution: | Chen Liang1,2 Qian Yunsheng1 Chang Benkang1 Zhang Yijun11Institute of Electronic Engineering & Optoelectronics Technology,Nanjing University ofScience and Technology,Nanjing,Jiangsu 210094,China2Institute of Optoelectronics Technology,China Jiliang University,Hangzhou,Zhejiang 310018,China |
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| Abstract: | By solving the one-dimensional diffusion equation for equilibrium minority carriers of transmission-mode GaAs phtotocathodes,the equations for surface photovoltage spectroscopy of exponential and uniform doping transmission-mode GaAs photocathodes are deduced.Through metal organic chemistry vaporation deposition(MOCVD) technique,two GaAs photocathodes of different doping structures with the same active layer depth are designed.By measuring and theoretically emulating the surface photovoltage spectroscopy cu... |
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| Keywords: | optoelectronics GaAs photocathode surface photovoltage spectroscopy electron diffusion length |
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