Levels in74As from the74Ge(p,nγe)74As reaction |
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| Authors: | B Lal Y K Agarwal C Vyyy K Baba S M Bharathi S K Bhattacherjee |
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| Institution: | (1) Tata Institute of Fundamental Research, 400005 Bombay;(2) Bhabha Atomic Research Centre, Nuclear Physics Division, 400085 Bombay |
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| Abstract: | The low-lying levels in74As have been studied by means ofγ-ray and internal conversion electron spectroscopy following the74Ge(p,n)74As reaction. New levels at 372.7, 532.8, 632.1, 731.6, 752.7, 758.3, 801.6, 902.9 and 1128.5 keV, not observed in earlier
studies, have been established.J
π assignments have been made to several low-lying levels. An earlier ambiguity regarding the identification of an isomeric
level has been clarified. The half-life of a level at 271.4 keV has been measured to be 1.0±0.1 nsec; in addition, limits
on half-lives of levels at 182.7, 277.5 and 425.4 keV have been assigned. The level structure is discussed on the basis of
available nuclear models. |
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| Keywords: | Nuclear reaction74Ge(p n)74As enriched target E p =3 5– 5 0 MeV level scheme J π internal conversion coefficients half-lives of levels |
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