Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer |
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Authors: | Boguslawa Adamowicz Kengo Ikeya Morimichi Mutoh Toshiya Saitoh Hajime Fujikura Hideki Hasegawa |
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Abstract: | Using the photoluminescence surface state spectroscopy (PLS3) technique, attempts were made to determine the surface state density (Nss) distribution on AlxGa1−xAs (x≈0.3) surfaces passivated by the Si interface control layer (ICL) technique. Air-exposed AlGaAs epitaxial wafers which are technologically important for fabrication of various devices were passivated ex situ by forming a SiO2/Si3N4/Si ICL/AlGaAs structure after the HCl treatment and their photoluminescence behavior was investigated in detail. The result of the PLS3 analysis indicated that Si ICL-based passivation reduces the minimum interface state density value down to 1010 cm−2 eV−1 range. Some indication was also obtained that further improvements are possible by using electron cyclotron resonance (ECR)-enhanced N2 plasma for Si3N4/Si ICL interface formation. |
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Keywords: | Passivation Interface control layer Photoluminescence surface state spectroscopy AlGaAs |
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