Effect of high density of states in the presence of interchain coupling on the transition temperature

The combinationN(0)I² (N(0)-electronic density of states at the Fermi level,I²-electron-phonon coupling constant) is calculated in the tight-binding approximation for the ₂ band of V₃Si. In this model the density of states can be very high even when strong interchain coupling is present. It is found thatI² is almost insensitive to changes in the interchain coupling, and that a significant increase inN(0)I² of this model can be achieved only for low occupation numbers of the ₂ band.Work supported by a grant from the National Council for Research and Development, Israel and KfK (Kernforschungszentrum, Karlsruhe, FRG)