Role of substrate temperature on structure and magnetization of Cr-implanted GaN thin film |
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Authors: | G Husnain Yao Shu-De Ishaq Ahmad Li Lin |
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Institution: | 1. State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing, 100871, China 2. Experimental Physics Lab, National Centre for Physics, Quaid-I-Azam University, Islamabad, 45320, Pakistan 3. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 51 01 19, 01314, Dresden, Germany
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Abstract: | Chromium ions implantation was performed into metal–organic chemical vapor deposition grown GaN thin film of thickness about 2 µm at 5 × 1016 cm?2 fluence. Implantation was performed at various substrate temperatures (RT, 250, 350 °C). Rapid thermal annealing was employed at 900 °C to remove implantation-induced damages as well as for activation of dopant. Structural study was performed by Rutherford backscattering and channeling spectrometry and high-resolution X-ray diffraction. To confirm magnetic properties at room temperature, hysteresis loops were obtained using alternating gradient magneto-meter. Well-defined hysteresis loops were achieved at 300 K in implanted and annealed samples. Temperature-dependent magnetization indicated magnetic moment at 5 K and retain up to 380 K. |
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