Magnetic-field-induced band-structure change in CeBiPt |
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Authors: | Kozlova N Hagel J Doerr M Wosnitza J Eckert D Müller K-H Schultz L Opahle I Elgazzar S Richter Manuel Goll G von Löhneysen H Zwicknagl G Yoshino T Takabatake T |
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Institution: | Institut für Festk?rper- und Werkstoffforschung Dresden, D-01171 Dresden, Germany. |
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Abstract: | We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above approximately 25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology. |
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